| PART |
Description |
Maker |
| SBTC-2-10-75_75L SBTC-2-10-75 SBTC-2-10-75L SBTC-2 |
Power Splitter/Combiners 2 Way-0??75蟹 10 to 1000 MHz
Power Splitter/Combiners 2 Way-075з 10 to 1000 MHz 功分合路2路，0Σ75з101000兆赫
Power Splitter/Combiners 2 Way-0° 75 10 to 1000 MHz
Power Splitter/Combiners 2 Way-0∑ 75з 10 to 1000 MHz
Power Splitter/Combiners 2 Way-0 75 10 to 1000 MHz
|
MINI[Mini-Circuits]
|
| SBTC-2-10 SBTC-2-10_10L SBTC-2-10L SBTC-2-1010L |
Power Splitter/Combiners 2 Way-0??50蟹 5 to 1000 MHz
Power Splitter/Combiners 2 Way-050з 5 to 1000 MHz
Power Splitter/Combiners 2 Way-0° 50 5 to 1000 MHz
Power Splitter/Combiners 2 Way-0∑ 50з 5 to 1000 MHz
From old datasheet system
Power Splitter/Combiners 2 Way-0 50 5 to 1000 MHz
|
MINI[Mini-Circuits]
|
| SCA-4-10 |
Power Splitter/Combiner 4 Way-050з 5 to 1000 MHz 5 MHz - 1000 MHz RF/MICROWAVE COMBINER, 2.5 dB INSERTION LOSS
Power Splitter/Combiner 4 Way-0∑ 50з 5 to 1000 MHz
Power Splitter/Combiner 4 Way-0° 50?/a> 5 to 1000 MHz
|
MINI[Mini-Circuits]
|
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
| ZFSC-2-2 |
Power Splitter/Combiner 2 Way-0 50楼? 10 to 1000 MHz
Power Splitter/Combiner 2 Way-0 50惟 10 to 1000 MHz
Power Splitter/Combiner 2 Way-0 50Ω 10 to 1000 MHz
|
Mini-Circuits
|
| IXFM12N100 IXFH10N100 IXFH12N100 IXFH13N100 IXFM10 |
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
HiPerFET Power MOSFETs 12 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 13 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| ZAPD-1 |
Power Splitter/Combiner 2 Way-0 50Ω 500 to 1000 MHz
Power Splitter/Combiner 2 Way-0 50惟 500 to 1000 MHz
Power Splitter/Combiner 2 Way-0 50ヘ 500 to 1000 MHz
|
Mini-Circuits
|
| CA176.8PF/-1PF500V CA186.8PF/-0.5PF1000V CA184.7PF |
CAPACITOR, MICA, 500 V, 0.0000068 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0000068 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0000047 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 5000 V, 0.000068 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.000015 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.00068 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.00047 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 300 V, 0.001 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0012 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0039 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.000012 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 500 V, 0.0068 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0027 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.00056 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0018 uF, THROUGH HOLE MOUNT AXIAL LEADED
|
Lattice Semiconductor, Corp.
SPC Technology
IRC Advanced Film
Hokuriku Electric Industry Co., Ltd.
TE Connectivity, Ltd.
ITT Interconnect Solutions
|
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
| H-81-4TNC H-81-4 H-81-4BNC H-81-4N H-81-4SMA H814 |
180 Two-Way Power Divider 5 - 1000 MHz
180Two-Way Power Divider 51000 MHz
180 Two-Way Power Divider 5 - 1000 MHz 180双向功分5 - 1000兆赫
|
MACOM[Tyco Electronics]
Amphenol, Corp.
|
| APT10021JFLL_04 APT10021JFLL APT10021JFLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
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